جلسه سخنرانی علمی  دکتر Yinchu shen با عنوان «Explicit Gain Principle for High Gain Photoconductors» سه شنبه  15 اسفندماه جاری ساعت 14 به صورت مجازی برگزار می شود

لینک ورود به جلسه سخنرانی 

Biography
Shen graduated from Shanghai Jiaotong University and received B.S. degree in ECE major in June 2020, then joined University of Michigan – Shanghai Jiao Tong University Joint Institute (JI) as a PhD student in September 2020. His research focuses on silicon photoconductance, nanowires and photodetectors.

Abstract
The past 50 years, the high gain in quantum efficiency of photoconductors attracts a lot of attention. This phenomenon is often explained by a widely accepted theory in which the photogain is proportional to the minority carrier lifetime and inversely proportional to the carrier transit time across the photoconductor. It occasionally misleads scientists to believe that a high-speed and high-gain photodetector can be made simply by shortening the device length. The theory is derived on the assumption that the distribution of photogenerated excess carriers is spatially uniform. We first prove that a photoconductor intrinsically has no gain. With the help of photo Hall effect, we revealed the real gain mechanism and derived the explicit gain equations. We also study analytical transient photoresponses to make our work more complete.